Silicon dioxide nanoparticles are used as oxide layer in metal-oxide-silicon tunneling diodes. With its non-uniformity in thickness, tunneling current is concentrated in carrier accumulation region. Both electron and hole can be confined to enhance radiative recombination rate. Electroluminescence at silicon band edge (1.1 /spl mu/m) with external quantum efficiency 1.5/spl times/10/sup -4/ has been achieved. KOH wet etch also contributes to improvement on efficiency by removing nonradiative recombination center at surface. Frequency response is exploited as tool for extraction radiative and nonradiative recombination rate.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Using SiO/sub 2/ nanoparticles to efficiently enhance light emission from metal-oxide silicon tunneling diodes on Si


    Contributors:


    Publication date :

    2002-01-01


    Size :

    281554 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Using SiO~2 Nanoparticles to Efficiently Enhance Light Emission from Metal-Oxide-Silicon Tunneling Diodes on Si

    Lin, C.-F. / Huang, W.-P. / Liang, E.-Z. et al. | British Library Conference Proceedings | 2002


    Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching

    Huang, W.-P. / Lin, C.-F. / Guo li Taiwan da xue et al. | British Library Conference Proceedings | 2003



    Efficient ligit emission from metal-oxide-sdicontunneling diodes on Si

    Eih-Zhe Liang, / Wu-Ping Huang, / Ting-Wien SuHsing-Huang Hsieh, et al. | IEEE | 2003


    Tunneling equipment capable of efficiently cooling

    ZHONG GUOLIANG / WANG XI / LIU ZHUN et al. | European Patent Office | 2024

    Free access