Silicon dioxide nanoparticles are used as oxide layer in metal-oxide-silicon tunneling diodes. With its non-uniformity in thickness, tunneling current is concentrated in carrier accumulation region. Both electron and hole can be confined to enhance radiative recombination rate. Electroluminescence at silicon band edge (1.1 /spl mu/m) with external quantum efficiency 1.5/spl times/10/sup -4/ has been achieved. KOH wet etch also contributes to improvement on efficiency by removing nonradiative recombination center at surface. Frequency response is exploited as tool for extraction radiative and nonradiative recombination rate.
Using SiO/sub 2/ nanoparticles to efficiently enhance light emission from metal-oxide silicon tunneling diodes on Si
2002-01-01
281554 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2002
|Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
British Library Conference Proceedings | 2003
|