Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used as an all-optoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In/sub 0.3/Ga/sub 0.7/As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.


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    Titel :

    Continuous-wave terahertz photomixing in low-temperature InGaAs


    Beteiligte:
    Baker, C. (Autor:in) / Gregory, I.S. (Autor:in) / Tribe, W.R. (Autor:in) / Evans, M.J. (Autor:in) / Missous, M. (Autor:in) / Linfield, E.H. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    166424 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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