Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used as an all-optoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In/sub 0.3/Ga/sub 0.7/As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.
Continuous-wave terahertz photomixing in low-temperature InGaAs
01.01.2004
166424 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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