Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were measured and compared with as-grown material confirming that high lasing efficiency was maintained.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Lasing properties of GaAs/AlGaAs lasers grown by MOVPE and bandgap-shifted by impurity free vacancy diffusion


    Contributors:
    Ayling, S.G. (author) / Bryce, A.C. (author) / Marsh, J.H. (author) / Roberts, J.S. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 375-376 vol.2


    Publication date :

    1994-01-01


    Size :

    181200 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Lasing Properties of GaAs/AlGaAs Lasers Grown by MOVPE and Bandgap-Shifted by Impurity Free Vacancy Diffusion

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Kinetics of impurity free vacancy disordering in GaAs/AlGaAs heterostructures

    Saher Helmy, A. / Aitchison, J.S. / Marsh, J.H. | IEEE | 1997


    Kinetics of Impurity Free Vacancy Disordering in GaAs/AlGaAs Heterostructures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    GaAs/AlGaAs photonic integrated circuits fabricated using impurity-free vacancy disordering (Invited Paper) [2401-27]

    Marsh, J. H. / Cusumano, P. / Bryce, A. C. et al. | British Library Conference Proceedings | 1995