Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were measured and compared with as-grown material confirming that high lasing efficiency was maintained.
Lasing properties of GaAs/AlGaAs lasers grown by MOVPE and bandgap-shifted by impurity free vacancy diffusion
Proceedings of LEOS'94 ; 2 ; 375-376 vol.2
1994-01-01
181200 byte
Conference paper
Electronic Resource
English
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