Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were measured and compared with as-grown material confirming that high lasing efficiency was maintained.


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    Titel :

    Lasing properties of GaAs/AlGaAs lasers grown by MOVPE and bandgap-shifted by impurity free vacancy diffusion


    Beteiligte:
    Ayling, S.G. (Autor:in) / Bryce, A.C. (Autor:in) / Marsh, J.H. (Autor:in) / Roberts, J.S. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 375-376 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    181200 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Lasing Properties of GaAs/AlGaAs Lasers Grown by MOVPE and Bandgap-Shifted by Impurity Free Vacancy Diffusion

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


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    Saher Helmy, A. / Aitchison, J.S. / Marsh, J.H. | IEEE | 1997


    Kinetics of Impurity Free Vacancy Disordering in GaAs/AlGaAs Heterostructures

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    GaAs/AlGaAs photonic integrated circuits fabricated using impurity-free vacancy disordering (Invited Paper) [2401-27]

    Marsh, J. H. / Cusumano, P. / Bryce, A. C. et al. | British Library Conference Proceedings | 1995