In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing.
InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer
1996-01-01
126339 byte
Conference paper
Electronic Resource
English
InGaAs GRINSCH-SQW Lasers with Novel Carbon Delta Doped Contact Layer
British Library Conference Proceedings | 1996
|Wavelength Shifting of GaAs GRINSCH Lasers by Ion Implantation
British Library Conference Proceedings | 1997
|British Library Conference Proceedings | 1996
|