In conclusion we have described the impurity-free vacancy disordering of AlGaAs-AlGaAs GRIN quantum well structures by a single-step rapid thermal annealing (RTA). We have used the samples with different mesa widths to investigate the spectral shifts in the photoluminescence (PL) and lasing characteristics.


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    Title :

    Stripe-size dependent quantum well intermixing induced by impurity-free vacancy disordering


    Contributors:
    Son, N.J. (author) / Park, B.H. (author) / Bae, J.H. (author) / Kwak, K.S. (author) / Han, H. (author) / O'Dae Kwon (author)


    Publication date :

    1997-01-01


    Size :

    187655 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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