In conclusion we have described the impurity-free vacancy disordering of AlGaAs-AlGaAs GRIN quantum well structures by a single-step rapid thermal annealing (RTA). We have used the samples with different mesa widths to investigate the spectral shifts in the photoluminescence (PL) and lasing characteristics.
Stripe-size dependent quantum well intermixing induced by impurity-free vacancy disordering
1997-01-01
187655 byte
Conference paper
Electronic Resource
English
Stripe-size Dependent Quantum Well Intermixing Induced by Impurity-free Vacancy Disordering
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