In conclusion we have described the impurity-free vacancy disordering of AlGaAs-AlGaAs GRIN quantum well structures by a single-step rapid thermal annealing (RTA). We have used the samples with different mesa widths to investigate the spectral shifts in the photoluminescence (PL) and lasing characteristics.


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    Titel :

    Stripe-size dependent quantum well intermixing induced by impurity-free vacancy disordering


    Beteiligte:
    Son, N.J. (Autor:in) / Park, B.H. (Autor:in) / Bae, J.H. (Autor:in) / Kwak, K.S. (Autor:in) / Han, H. (Autor:in) / O'Dae Kwon (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    187655 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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