We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 /spl Aring/-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 /spl mu/m and has a low threshold pump power of 4.2 KW/cm/sup 2/.
Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates
Proceedings of LEOS'94 ; 1 ; 280-281 vol.1
1994-01-01
208761 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1994
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|British Library Conference Proceedings | 1994
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