We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 /spl Aring/-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 /spl mu/m and has a low threshold pump power of 4.2 KW/cm/sup 2/.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates


    Contributors:
    Chua, C.L. (author) / Lin, C.H. (author) / Zhu, Z.H. (author) / Lo, Y.H. (author) / Hong, M. (author) / Mannaerts, J.P. (author) / Bhat, R. (author)

    Published in:

    Proceedings of LEOS'94 ; 1 ; 280-281 vol.1


    Publication date :

    1994-01-01


    Size :

    208761 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Long Wavelength Vertical Cavity Laser Using Strain- Compensated Multiple Quantum Wells on GaAs Substrates

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Long Wavelength VCSELs using Wafer-fused GaAs/AlAs Bragg Mirror and Strain-compensated Quantum Wells

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995



    Low Threshold 1.59 m Vertical-Cavity Surface-Emitting Lasers with Strain-Compensated Multiple Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994