We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 /spl Aring/-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 /spl mu/m and has a low threshold pump power of 4.2 KW/cm/sup 2/.


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    Titel :

    Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates


    Beteiligte:
    Chua, C.L. (Autor:in) / Lin, C.H. (Autor:in) / Zhu, Z.H. (Autor:in) / Lo, Y.H. (Autor:in) / Hong, M. (Autor:in) / Mannaerts, J.P. (Autor:in) / Bhat, R. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 280-281 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    208761 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Long Wavelength Vertical Cavity Laser Using Strain- Compensated Multiple Quantum Wells on GaAs Substrates

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


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    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995



    Low Threshold 1.59 m Vertical-Cavity Surface-Emitting Lasers with Strain-Compensated Multiple Quantum Wells

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994