Many of the numerous applications of vertical cavity laser diodes being nowadays under discussion require single transverse mode emission behavior. A quantitative understanding of the factors limiting the maximum achievable single-mode output power is thus vital for further device optimization. We have theoretically investigated the effects of spatial hole burning in the active zone on the emission characteristics of gain-guided AlAs-GaAs DBR laser diodes in a self-consistent manner. The small single-mode power of low threshold devices can be attributed to strong hole burning induced by the excessively enhanced internal electric field.<>
Spatial hole burning effects in gain-guided vertical cavity laser diodes
Proceedings of LEOS '93 ; 550-551
1993-01-01
160636 byte
Conference paper
Electronic Resource
English
Spatial Hole Burning Effects in Gain-Guided Vertical Cavity Laser Diodes
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