Many of the numerous applications of vertical cavity laser diodes being nowadays under discussion require single transverse mode emission behavior. A quantitative understanding of the factors limiting the maximum achievable single-mode output power is thus vital for further device optimization. We have theoretically investigated the effects of spatial hole burning in the active zone on the emission characteristics of gain-guided AlAs-GaAs DBR laser diodes in a self-consistent manner. The small single-mode power of low threshold devices can be attributed to strong hole burning induced by the excessively enhanced internal electric field.<>


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    Title :

    Spatial hole burning effects in gain-guided vertical cavity laser diodes


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    160636 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Spatial Hole Burning Effects in Gain-Guided Vertical Cavity Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993





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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993