Many of the numerous applications of vertical cavity laser diodes being nowadays under discussion require single transverse mode emission behavior. A quantitative understanding of the factors limiting the maximum achievable single-mode output power is thus vital for further device optimization. We have theoretically investigated the effects of spatial hole burning in the active zone on the emission characteristics of gain-guided AlAs-GaAs DBR laser diodes in a self-consistent manner. The small single-mode power of low threshold devices can be attributed to strong hole burning induced by the excessively enhanced internal electric field.<>


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    Titel :

    Spatial hole burning effects in gain-guided vertical cavity laser diodes


    Beteiligte:
    Michalzik, R. (Autor:in) / Ebeling, K.J. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    160636 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Spatial Hole Burning Effects in Gain-Guided Vertical Cavity Laser Diodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993





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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993