The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 /spl mu/m by incorporation of additional optically active centres was demonstrated.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Dislocation engineered silicon for light emission


    Contributors:


    Publication date :

    2005-01-01


    Size :

    84756 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Dislocation Engineered Silicon for Light Emission

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    Mechanism of Light Emission in Porous Silicon

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Hyper-Rayleigh light scattering by dislocation deformation

    Jae-Woo Jeong, / Lyubchanskii, I.L. / Sung-Chul Shin, | IEEE | 1999



    `On-silicon' engineered substrates speed photonic device development

    Williams, D. / Clark, A. / Lebby, M. | British Library Online Contents | 2013