The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 /spl mu/m by incorporation of additional optically active centres was demonstrated.
Dislocation engineered silicon for light emission
01.01.2005
84756 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Dislocation Engineered Silicon for Light Emission
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