The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 /spl mu/m by incorporation of additional optically active centres was demonstrated.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Dislocation engineered silicon for light emission


    Beteiligte:
    Homewood, K.P. (Autor:in) / Lourengo, M.A. (Autor:in) / Milosavljevicl, M. (Autor:in) / Shao, G. (Autor:in) / Gwilliam, R.M. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    84756 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Dislocation Engineered Silicon for Light Emission

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005


    Mechanism of Light Emission in Porous Silicon

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Hyper-Rayleigh light scattering by dislocation deformation

    Jae-Woo Jeong, / Lyubchanskii, I.L. / Sung-Chul Shin, | IEEE | 1999



    `On-silicon' engineered substrates speed photonic device development

    Williams, D. / Clark, A. / Lebby, M. | British Library Online Contents | 2013