SiC:Er2O3 films with different ratios of SiC to Er2O3 have been deposited on p-type Si substrates by the magnetron co-sputtering technique fully compatible with current Si processing technologies. 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/n+-Si/SiC:Er2O3/p-Si with suitable ratios of SiC to Er2O3 was measured under forward biases.


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    Title :

    1.54 µm electroluminescence in SiC:Er2O3 films


    Contributors:
    Qin, G. G. (author) / Yin, Y. (author) / Ran, G. Z. (author)


    Publication date :

    2011-09-01


    Size :

    292077 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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