SiC:Er2O3 films with different ratios of SiC to Er2O3 have been deposited on p-type Si substrates by the magnetron co-sputtering technique fully compatible with current Si processing technologies. 1.54 μm electroluminescence from the structure of indium tin oxide (ITO)/n+-Si/SiC:Er2O3/p-Si with suitable ratios of SiC to Er2O3 was measured under forward biases.
1.54 µm electroluminescence in SiC:Er2O3 films
01.09.2011
292077 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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