Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.
Excitation induced polarization decay in semiconductor quantum dots
2005 Quantum Electronics and Laser Science Conference ; 1 ; 540-542 Vol. 1
2005-01-01
683981 byte
Conference paper
Electronic Resource
English
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