Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.


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    Title :

    Excitation induced polarization decay in semiconductor quantum dots


    Contributors:
    Schneider, H.C. (author) / Chow, W.W. (author) / Koch, S.W. (author)


    Publication date :

    2005-01-01


    Size :

    683981 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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