Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction between localized and delocalized carriers leads to frequency dependent broadening and nonlinear resonance shifts. Non-Markovian effects are discussed.


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    Titel :

    Excitation induced polarization decay in semiconductor quantum dots


    Beteiligte:
    Schneider, H.C. (Autor:in) / Chow, W.W. (Autor:in) / Koch, S.W. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    683981 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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