Summary form only given. GaAs is a very interesting material for mid IR nonlinear frequency conversion. To obtain shorter periods several techniques are based on patterning a template substrate thanks to photolithography have been proposed. After having prepared the template a growth is made on it with organometallic chemical vapor deposition (OMCVD) or molecular beam epitaxy (MBE). However these techniques have a low deposition rate and waveguide structures must be used. The purpose of this contribution is to study and to characterize the growth of a thick layer of GaAs on a pattern of antiphase domains (APDs) for future bulk quasi-phase matched nonlinear applications.


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    Title :

    Second harmonic generation of a CO/sub 2/ laser using a thick quasi-phase-matched GaAs layer grown by hybride vapor phase epitaxy


    Contributors:
    Becouarn, L. (author) / Gerard, B. (author) / Brevignon, M. (author) / Lehoux, J. (author) / Gourdel, Y. (author) / Lallier, E. (author)


    Publication date :

    1999-01-01


    Size :

    148098 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English