Summary form only given. GaAs is a very interesting material for mid IR nonlinear frequency conversion. To obtain shorter periods several techniques are based on patterning a template substrate thanks to photolithography have been proposed. After having prepared the template a growth is made on it with organometallic chemical vapor deposition (OMCVD) or molecular beam epitaxy (MBE). However these techniques have a low deposition rate and waveguide structures must be used. The purpose of this contribution is to study and to characterize the growth of a thick layer of GaAs on a pattern of antiphase domains (APDs) for future bulk quasi-phase matched nonlinear applications.


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    Titel :

    Second harmonic generation of a CO/sub 2/ laser using a thick quasi-phase-matched GaAs layer grown by hybride vapor phase epitaxy


    Beteiligte:
    Becouarn, L. (Autor:in) / Gerard, B. (Autor:in) / Brevignon, M. (Autor:in) / Lehoux, J. (Autor:in) / Gourdel, Y. (Autor:in) / Lallier, E. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    148098 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch