In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0.1 /spl mu/m gate length PHEMT's passivated by either the conventional Si/sub 3/N/sub 4/ or the low dielectric constant benzo-cyclo-butene (BCB)layers. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si/sub 3/N/sub 4/, whereas the DC and other RF properties were not significantly affected by the passivation materials.
Analysis on the low-k benzo-cyclo-butene passivation of pseudomorphic high electron mobility transistors
2002-01-01
308644 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2002
|Low Characteristic Impedance Transmission Line Fabricated using Benzo-Cyclo-Butene Thin Film
British Library Conference Proceedings | 2002
|An InGaP/InGaAs/GaAs Double Channel Pseudomorphic High Electron Mobility Transistor (DC-PHEMT)
British Library Conference Proceedings | 2002
|