Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.


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    Title :

    Measuring Diffusion and Recombination in Polycrystalline Silicon


    Contributors:
    Zook, J. D. (author)

    Published in:

    Publication date :

    1983-08-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English


    Keywords :


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