Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.
Measuring Diffusion and Recombination in Polycrystalline Silicon
NASA Tech Briefs ; 7 , 3
01.08.1983
Sonstige
Keine Angabe
Englisch
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