Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.


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    Title :

    Molecular-Beam Epitaxy Of CrSi2 on Si(111)



    Published in:

    Publication date :

    1989-06-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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