Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.
Molecular-Beam Epitaxy Of CrSi2 on Si(111)
NASA Tech Briefs ; 13 , 6
01.06.1989
Sonstige
Keine Angabe
Englisch
Molecular-Beam-Epitaxy Program
NTRS | 1988
|Investigation of CrSi2 and MoSi2 as anode materials for lithium-ion batteries
Online Contents | 2012
|Molecular-beam epitaxy in space
Tema Archiv | 1977
|Molecular-Beam Epitaxy Of IrSi3
NTRS | 1991
|Silicon Holder For Molecular-Beam Epitaxy
NTRS | 1993
|