Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.
Forward Bias Inhibits Single-Event Upsets
NASA Tech Briefs ; 14 , 4
1990-04-01
Miscellaneous
No indication
English
AIAA | 1983
|Anomalies due to Single Event Upsets
Online Contents | 1994
|System effects of single event upsets
AIAA | 1989
|Estimating Rates Of Single-Event Upsets
NTRS | 1988
|Anomalies due to single event upsets
AIAA | 1990
|