Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.


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    Titel :

    Forward Bias Inhibits Single-Event Upsets


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.04.1990



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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