Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.
Forward Bias Inhibits Single-Event Upsets
NASA Tech Briefs ; 14 , 4
01.04.1990
Sonstige
Keine Angabe
Englisch
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