Potentially narrow margins of chirality-based chopping of magnetic stripes avoided. Half-state readout is experimental method of readout in Vertical-Bloch-Line (VBL) memory. Based on differential deflections of magnetic stripe domains in which data bits stored. To give meaning to explanation of half-state readout, see "Vertical-Bloch-Line Memory" (NPO-18467).


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    Title :

    Half-State Readout In Vertical-Bloch-Line Memory


    Contributors:

    Published in:

    Publication date :

    1994-02-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English





    Vertical-Bloch-Line Memory

    Katti, Romney R. / Wu, Jiin-Chuan / Stadler, Henry L. | NTRS | 1993


    Three-Dimensional Vertical-Bloch-Line Memory System

    Katti, Romney R. / Wu, Jiin-Chuan / Stadler, Henry L. | NTRS | 1994