Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.


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    Title :

    Garnet Random-Access Memory


    Contributors:

    Published in:

    Publication date :

    1995-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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