Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.


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    Title :

    Effect of defects on III-V MWIR nBn detector performance


    Contributors:
    Savich, G. R. (author) / Sidor, D. E. (author) / Du, X. (author) / Morath, C. P. (author) / Cowan, V. M. (author) / Wicks, G. W. (author)

    Conference:

    Nanophotonics and Macrophotonics for Space Environments VIII ; 2014 ; San Diego,California,United States


    Published in:

    Publication date :

    2014-09-17





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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