Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.
Effect of defects on III-V MWIR nBn detector performance
Nanophotonics and Macrophotonics for Space Environments VIII ; 2014 ; San Diego,California,United States
Proc. SPIE ; 9226
17.09.2014
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Effect of defects on III-V MWIR nBn detector performance [9226-25]
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