Electron-beam-induced crystallization, growth, and purification by zone refining from the liquid phase of 1-micrometer-thick, narrow band-gap semiconducting alloys, eutectics, and semimetal layers require a high-vacuum noncontaminating environment. Experiments are proposed for investigating the process control parameters as a function of the energy density of electron beams, the solid-liquid interface geometry, thermal gradients, and propagation rates.


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    Title :

    Electron-beam microzone refining of narrow band-gap semiconducting alloy layers


    Additional title:

    Mikrozonenreinigung von Halbleiterverbundschichten mit schmalem Bandabstand mittels Elektronenstrahlen


    Contributors:

    Published in:

    Publication date :

    1977


    Size :

    2 Seiten, 17 Quellen



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English




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