Electron-beam-induced crystallization, growth, and purification by zone refining from the liquid phase of 1-micrometer-thick, narrow band-gap semiconducting alloys, eutectics, and semimetal layers require a high-vacuum noncontaminating environment. Experiments are proposed for investigating the process control parameters as a function of the energy density of electron beams, the solid-liquid interface geometry, thermal gradients, and propagation rates.


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    Titel :

    Electron-beam microzone refining of narrow band-gap semiconducting alloy layers


    Weitere Titelangaben:

    Mikrozonenreinigung von Halbleiterverbundschichten mit schmalem Bandabstand mittels Elektronenstrahlen


    Beteiligte:
    Wieder, H.H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1977


    Format / Umfang :

    2 Seiten, 17 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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