IGBT-converters for universal use in high power traction applications have been developed. Key point of this development is a new gate drive and protection concept. The new gate drive circuit makes it possible to control di/dt at turn on/turn off and limit overvoltage and overcurrent by the IGBT itself. No snubber circuits or transient suppressor diodes are needed, neither in normal operation nor in case of short circuit being turned off. Applications in converters up to 720 kVA with paralleled IGBTs and even with series connected IGBTs have been realized and successfully tested. Results of measurements are given, which demonstrate the good switching characteristics and safe operation under overload or fault conditions of these converters.


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    Title :

    High power IGBT converters with new gate drive and protection circuit


    Additional title:

    IGBT-Hochleistungsumrichter mit neuer Gate-Steuerung und Schutzschaltung


    Contributors:
    Gediga, S. (author) / Marquardt, R. (author) / Sommer, R. (author)


    Publication date :

    1995


    Size :

    5 Seiten, 10 Bilder, 6 Quellen


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




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