IGBT-converters for universal use in high power traction applications have been developed. Key point of this development is a new gate drive and protection concept. The new gate drive circuit makes it possible to control di/dt at turn on/turn off and limit overvoltage and overcurrent by the IGBT itself. No snubber circuits or transient suppressor diodes are needed, neither in normal operation nor in case of short circuit being turned off. Applications in converters up to 720 kVA with paralleled IGBTs and even with series connected IGBTs have been realized and successfully tested. Results of measurements are given, which demonstrate the good switching characteristics and safe operation under overload or fault conditions of these converters.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    High power IGBT converters with new gate drive and protection circuit


    Weitere Titelangaben:

    IGBT-Hochleistungsumrichter mit neuer Gate-Steuerung und Schutzschaltung


    Beteiligte:
    Gediga, S. (Autor:in) / Marquardt, R. (Autor:in) / Sommer, R. (Autor:in)


    Erscheinungsdatum :

    1995


    Format / Umfang :

    5 Seiten, 10 Bilder, 6 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Status and Trend of High Power IGBT Gate Drive Technology

    Du, Huiqing / Wei, Jun / Liu, Yuming et al. | TIBKAT | 2022


    IGBT converters for high power applications

    British Library Online Contents | 2000


    Status and Trend of High Power IGBT Gate Drive Technology

    Du, Huiqing / Wei, Jun / Liu, Yuming et al. | Springer Verlag | 2022


    Status and Trend of High Power IGBT Gate Drive Technology

    Du, Huiqing / Wei, Jun / Liu, Yuming et al. | British Library Conference Proceedings | 2022


    An Original Design of MOSFET / IGBT Gate Circuit Layout to Suppress Power/Drive Interaction

    Akhbari, M. / Schanen, J. L. / Roudet, J. et al. | British Library Conference Proceedings | 1998