Semiconductor Photonic Integrated Circuits with Directly Formed Waveguides Using In-Plane Bandgap Energy Control by Selective MOVPE High Saturation Intensity InGaAs/InP Waveguide Photodetector
6th Annual meeting, LEOS '93 ; 1993 ; San Jose; CA
01.01.1993
2 pages
IEEE cat no 93CH3297-9
Aufsatz (Konferenz)
Englisch
electro-optics , LEOS , IEEE , lasers
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High Saturation Intensity InGaAs/InP Waveguide Photodetector
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