Growth of InGaN Quantum Wells and InGaN/GaN Quantum Well LEDs by MOCVD
Annual meeting; 9th, IEEE: Lasers and Electro-Optics Society; LEOS '96 ; 1996 ; Boston; MA
01.01.1996
255 pages
Described as proceedings. IEEE cat no: 96CH35895
Aufsatz (Konferenz)
Englisch
electro-optics , LEOS , IEEE , lasers
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Luminescence efficiency of InGaN-based multiple quantum well UV-LEDS
British Library Conference Proceedings | 2003
|Accurate modelling of InGaN quantum wells
British Library Online Contents | 2006
|