High-Power, Reliable, 730nm-Emitting InGaAsP-Active Region Diode Lasers
Annual meeting; 11th, IEEE: Lasers and Electro-Optics Society; LEOS '98 ; 1998 ; Orlando; FL
01.01.1998
2 pages
IEEE cat no: 98CH36243
Aufsatz (Konferenz)
Englisch
electro-optics , LEOS , IEEE , lasers
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
780nm-emitting Al-free Active Region Diode Lasers with Compressively-Strained InGaAsP Quantum Wells
British Library Conference Proceedings | 1997
|High CW Output Power InGaAs/InGaAsP/InGaP Diode Lasers: Effect of Substrate Misorientation
British Library Conference Proceedings | 1995
|British Library Conference Proceedings | 1997
|High-power 1.5-m InGaAsP/InP Lasers with a Tapered-gain-region
British Library Conference Proceedings | 1997
|High-performance Al-free Active-region Diode Lasers
IEEE | 1997
|