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    Titel :

    Low threshold 630nm band AlGaInP diode laser with AlAs native oxide current aperture


    Beteiligte:

    Kongress:

    Annual meeting; 12th, IEEE; Lasers and Electro-Optics Society; LEOS '99 ; 1999 ; San Francisco, CA



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    2 pages


    Anmerkungen:

    IEEE cat no 99CH37009




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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