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    Titel :

    TuY5 High Efficiency InGaAsN based Quantum Well Lasers Grown by GSMBE using a Solid as Source


    Beteiligte:

    Kongress:

    Annual meeting; 14th, IEEE; Lasers and Electro-Optics Society ; 2001 ; San Diego, CA



    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    2 pages


    Anmerkungen:

    IEEE cat no 01CH37242




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source

    Jian Wei, / Fengnian Xia, / Chunqiang Li, et al. | IEEE | 2001


    Carrier transport and injection efficiency of InGaAsN quantum-well lasers

    Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004


    Carrier Transport and Injection Efficiency of InGaAsN Quantum-Well Lasers

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004



    The effect of nitrogen in InGaAsN quantum well lasers

    Palmer, D.J. / Smowton, P.M. / Blood, P. et al. | IEEE | 2004