Oxidation phenomena of high purity CVD-SiC under atmospheric re-entry conditions
10th AIAA/NAL-NASDA-ISAS International Space Planes and Hypersonic Systems and Technologies Conference ; 2001 ; Kyoto , Japan
01.01.2001
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
The Oxidation Behavior of SiC under Atmospheric Re-entry Conditions
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