A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.


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    Titel :

    Photoelectric conversion device, method of manufacturing the same, and equipment


    Beteiligte:
    KANEDA TASUKU (Autor:in) / SHOYAMA TOSHIHIRO (Autor:in)

    Erscheinungsdatum :

    23.06.2020


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B60W CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION , Gemeinsame Steuerung oder Regelung von Fahrzeug-Unteraggregaten verschiedenen Typs oder verschiedener Funktion / G06T Bilddatenverarbeitung oder Bilddatenerzeugung allgemein , IMAGE DATA PROCESSING OR GENERATION, IN GENERAL / H04N PICTORIAL COMMUNICATION, e.g. TELEVISION , Bildübertragung, z.B. Fernsehen



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