A semiconductor device of an embodiment includes a silicon carbide layer having first and second plane, the silicon carbide layer including trench having a first portion and a second portion, the second portion having a width smaller than the first portion, an n-type first silicon carbide region, a p-type second silicon carbide region between the first silicon carbide region and the first plane, a p-type third silicon carbide region between the second silicon carbide region and the first plane and having a p-type impurity concentration lower than the second silicon carbide region, an n-type fourth silicon carbide region between the third silicon carbide region and the first plane, and an n-type fifth silicon carbide region between the second portion and the second silicon carbide region and having an n-type impurity concentration higher than the first silicon carbide region; and a gate electrode in the trench.


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    Titel :

    Semiconductor device, inverter circuit, driving device, vehicle, and elevator


    Beteiligte:
    KYOGOKU SHINYA (Autor:in) / OSHIMA TOSHIYUKI (Autor:in) / IIJIMA RYOSUKE (Autor:in)

    Erscheinungsdatum :

    15.03.2022


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B61C Lokomotiven , LOCOMOTIVES / B60K Anordnung oder Einbau von Antriebseinheiten oder von Kraft- bzw. Drehmomentübertragungen in Fahrzeugen , ARRANGEMENT OR MOUNTING OF PROPULSION UNITS OR OF TRANSMISSIONS IN VEHICLES / B66B Aufzüge , ELEVATORS / B60R Fahrzeuge, Fahrzeugausstattung oder Fahrzeugteile, soweit nicht anderweitig vorgesehen , VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern



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