A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face and including a first trench, a second trench having a distance of 100 nm or less from the first trench, a first silicon carbide region of n-type, a second silicon carbide region of p-type between the first trench and the second trench, a third silicon carbide region of n-type between the second silicon carbide region and the first face, a fourth silicon carbide region between the first trench and the second silicon carbide region and containing oxygen, and a fifth silicon carbide region between the second trench and the second silicon carbide region and containing oxygen; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate insulating layer; a second gate insulating layer; a first electrode; and a second electrode.


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    Titel :

    Semiconductor device including silicon carbide region containing oxygen


    Beteiligte:
    SHIMIZU TATSUO (Autor:in)

    Erscheinungsdatum :

    07.01.2025


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / B66B Aufzüge , ELEVATORS / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen



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