In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an area of a termination structure is provided. In order to solve the above-described problem, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second region provided to be closer to an outer peripheral side than the first region are provided in a junction termination portion, a first concentration gradient is provided in the first region, and a second concentration gradient larger than the first concentration gradient is provided in the second region.


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    Titel :

    Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle


    Beteiligte:

    Erscheinungsdatum :

    18.07.2017


    Medientyp :

    Patent


    Format :

    Elektronische Ressource


    Sprache :

    Englisch


    Klassifikation :

    IPC:    H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS , Anlagen zur Umformung von Wechselstrom in Wechselstrom, von Wechselstrom in Gleichstrom oder umgekehrt, oder von Gleichstrom in Gleichstrom und zur Verwendung in Netzen oder ähnlichen Stromversorgungssystemen / H02P CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS , Steuern oder Regeln von elektrischen Motoren, elektrischen Generatoren, dynamoelektrischen Umformern / B60L PROPULSION OF ELECTRICALLY-PROPELLED VEHICLES , Antrieb von elektrisch angetriebenen Fahrzeugen




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