The PHEMT MMIC LNA has been developed at Ka-band by using an optimized HEMT MMIC process and MBE /spl delta/-doped AlGaAs/InGaAs wafer. The PHEMT modeling small signal parameters have been successfully used in MMIC CAD and the full-wave EM analysis has been adopted for MMIC layout design. The resulted single- and two-stage MMICs have the performances: NF of 2.9 dB with gain of 4.5 dB at 30.5 GHz (single-stage) and NF of 4.8 dB with gain of 9.5 dB at 34.8 GHz (two-stage).


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    Titel :

    Ka-band AlGaAs/InGaAs PHEMT monolithic low-noise amplifier


    Beteiligte:
    Xiaojian Chen (Autor:in) / Jun Liu (Autor:in) / Junxian Wang (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    325778 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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