Summary form only given. In summary, we have demonstrated a novel travelling wave photodetector (TWPD) by low temperature grown (LTG) GaAs with 1.1 ps pulse response. The bandwidth is twice as high as previous demonstration for traveling wave structure or for PIN structures.


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    Titel :

    Low-temperature grown GaAs traveling wave PIN photodetector with high bandwidth


    Beteiligte:
    Yi-Jen Chiu (Autor:in) / Meischer, S.B. (Autor:in) / Bowers, J.E. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    126197 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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