Based on the recent development of diode lasers covering the spectral range from 800 to 1000 nm, we report in this work efficient laser emission at 1.06 and 1.34-/spl mu/m in highly-doped Nd:YAG under diode-pumping into the emitting level. In conclusion, the results of this work demonstrate that diode laser pumping into the emitting level of concentrated Nd laser materials is a solution for construction of efficient micro-lasers and for scaling to high power.


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    Titel :

    Efficient 1.06 and 1.34-/spl mu/m laser emission of highly-doped Nd:YAG under 885-nm diode pumping into the emitting level


    Beteiligte:
    Pavel, N. (Autor:in) / Taira, T. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    261034 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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