Based on the recent development of diode lasers covering the spectral range from 800 to 1000 nm, we report in this work efficient laser emission at 1.06 and 1.34-/spl mu/m in highly-doped Nd:YAG under diode-pumping into the emitting level. In conclusion, the results of this work demonstrate that diode laser pumping into the emitting level of concentrated Nd laser materials is a solution for construction of efficient micro-lasers and for scaling to high power.
Efficient 1.06 and 1.34-/spl mu/m laser emission of highly-doped Nd:YAG under 885-nm diode pumping into the emitting level
01.01.2005
261034 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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