Etched mirror lasers offer the possibility of being integrable in Opto-Electronic Integrated Circuits (OEIC). A versatile processing technique of GaAs/AlGaAs Wet Chemically Etched Mirror Lasers (WCEML) has been developed previously. It is applicable to all laser structures in the InGaAs/AlGaAs/GaAs system. A special set of masks allowed us to vary the cavity lengths of ridge waveguide type devices from 750 /spl mu/m down to 11 /spl mu/m and ridge widths of 4, 6 and 10 /spl mu/m. The processing requires four photolithography steps. In this paper we report on the results obtained from four different GRINSCH laser structures: one having a bulk GaAs active layer (50 nm thick) while the others have 2, 3 and 5 QWs of 7 nm GaAs as an active layer respectively.
Multiple quantized states lasing in short GaAs quantum well lasers
01.01.1997
192205 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Multiple Quantized States Lasing in Short GaAs Quantum Well Lasers
British Library Conference Proceedings | 1997
|British Library Conference Proceedings | 2001
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