Etched mirror lasers offer the possibility of being integrable in Opto-Electronic Integrated Circuits (OEIC). A versatile processing technique of GaAs/AlGaAs Wet Chemically Etched Mirror Lasers (WCEML) has been developed previously. It is applicable to all laser structures in the InGaAs/AlGaAs/GaAs system. A special set of masks allowed us to vary the cavity lengths of ridge waveguide type devices from 750 /spl mu/m down to 11 /spl mu/m and ridge widths of 4, 6 and 10 /spl mu/m. The processing requires four photolithography steps. In this paper we report on the results obtained from four different GRINSCH laser structures: one having a bulk GaAs active layer (50 nm thick) while the others have 2, 3 and 5 QWs of 7 nm GaAs as an active layer respectively.


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    Titel :

    Multiple quantized states lasing in short GaAs quantum well lasers


    Beteiligte:
    Karouta, F. (Autor:in) / Langeler, H.A. (Autor:in) / Smalbrugge, E. (Autor:in) / Van der Vleuten, W.C. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    192205 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch