Summary form only given. We demonstrate the first intracavity InGaAs quantum-well photodetector within a VCSEL laser diode. Effective responsivity is as high as 0.23 A/W; dark current is less than 1 nA, limited by our noise floor. In this work, we present experimental results of the first VCSEL with an intracavity quantum-well photodetector. The quantum well with its embedded position prevents stray light from interfering with the power detection and monitoring while its thin active region minimizes the dark current.


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    Titel :

    Intracavity quantum-well photodetection of a vertical-cavity surface-emitting laser


    Beteiligte:
    Lim, S.F. (Autor:in) / Li, G.S. (Autor:in) / Yuen, W. (Autor:in) / Chang-Hasnain, C.J. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    175732 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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