LDs in WDM systems must be equipped with Peltier elements to stabilize LD temperature. To solve this problem, the use of temperature-independent bandgap semiconductors as an active layer of LDs was proposed We proposed Tl-containing quaternary semiconductors TlInGaP and TlInGaAs as new Ill-V semiconductors showing temperature-independent bandgap energy for the possible application to the temperature-stable lasing wavelength laser diodes.


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    Titel :

    Tl-containing semiconductors for temperature-insensitive wavelength semiconductor lasers


    Beteiligte:
    Asahi, H. (Autor:in) / Lee, H.J. (Autor:in) / Fujiwara, A. (Autor:in) / Imada, A. (Autor:in) / Zhou, Y.K. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    100571 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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